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HGTG12N60B3

Manufacturer: ON Semiconductor
REK ID: 81729

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Obsolete 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 27A 
Current - Collector Pulsed (Icm) 110A 
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A 
Power - Max 104W 
Switching Energy 150µJ (on), 250µJ (off) 
Input Type Standard 
Gate Charge 51nC 
Td (on/off) @ 25°C 26ns/150ns 
Test Condition 480V, 12A, 25 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247-3 
Base Part Number HGTG12N60 

Description

IGBT 600V 27A 104W TO247 - IGBT 600V 27A 104W Through Hole TO-247-3

IGBT Transistors HGTG12N60B3

Datasheet HGTG12N60B3 (PDF)

Price (check the terms and price with the managers)
Available: 13 psc.
Price available upon request
HGTG12N60B3
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