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HGTG11N120CN

Manufacturer: ON Semiconductor
REK ID: 81730

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Obsolete 
IGBT Type NPT 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 43A 
Current - Collector Pulsed (Icm) 80A 
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 11A 
Power - Max 298W 
Switching Energy 400µJ (on), 1.3mJ (off) 
Input Type Standard 
Gate Charge 100nC 
Td (on/off) @ 25°C 23ns/180ns 
Test Condition 960V, 11A, 10 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 

Description

IGBT 1200V 43A 298W TO247 - IGBT NPT 1200V 43A 298W Through Hole TO-247

IGBT Transistors HGTG11N120CN

Datasheet HGTG11N120CN (PDF)

Price (check the terms and price with the managers)
Available: 3 psc.
Price available upon request
HGTG11N120CN
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