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HGTD1N120BNS9A

Manufacturer: ON Semiconductor
REK ID: 80040
0.71 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
IGBT Type NPT 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 5.3A 
Current - Collector Pulsed (Icm) 6A 
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A 
Power - Max 60W 
Switching Energy 70µJ (on), 90µJ (off) 
Input Type Standard 
Gate Charge 14nC 
Td (on/off) @ 25°C 15ns/67ns 
Test Condition 960V, 1A, 82 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 
Supplier Device Package TO-252AA 
Base Part Number HGTD1N120 

Description

IGBT 1200V 5.3A 60W TO252AA - IGBT NPT 1200V 5.3A 60W Surface Mount TO-252AA

IGBT Transistors HGTD1N120BNS9A

Datasheet HGTD1N120BNS9A (PDF)

Price (check the terms and price with the managers)
Available: 3 psc.
MOQPrice
0.71 € 
5,000 0.67 € 
HGTD1N120BNS9A
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