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HGT1S7N60A4DS

Manufacturer: ON Semiconductor
REK ID: 81946

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Obsolete 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 34A 
Current - Collector Pulsed (Icm) 56A 
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A 
Power - Max 125W 
Switching Energy 55µJ (on), 60µJ (off) 
Input Type Standard 
Gate Charge 37nC 
Td (on/off) @ 25°C 11ns/100ns 
Test Condition 390V, 7A, 25 Ohm, 15V 
Reverse Recovery Time (trr) 34ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 
Supplier Device Package TO-263AB 

Description

IGBT 600V 34A 125W TO263AB - IGBT 600V 34A 125W Surface Mount TO-263AB

IGBT Transistors HGT1S7N60A4DS

Datasheet HGT1S7N60A4DS (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
Price available upon request
HGT1S7N60A4DS
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