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HGT1S12N60A4DS

Manufacturer: ON Semiconductor
REK ID: 80715
3.49 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 54A 
Current - Collector Pulsed (Icm) 96A 
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A 
Power - Max 167W 
Switching Energy 55µJ (on), 50µJ (off) 
Input Type Standard 
Gate Charge 78nC 
Td (on/off) @ 25°C 17ns/96ns 
Test Condition 390V, 12A, 10 Ohm, 15V 
Reverse Recovery Time (trr) 30ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 
Supplier Device Package TO-263AB 
Base Part Number HGT1S12N60 

Description

IGBT 600V 54A 167W D2PAK - IGBT 600V 54A 167W Surface Mount TO-263AB

IGBT Transistors HGT1S12N60A4DS

Datasheet HGT1S12N60A4DS (PDF)

Price (check the terms and price with the managers)
Available: 16 psc.
MOQPrice
3.49 € 
HGT1S12N60A4DS
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