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HGT1S10N120BNS

Manufacturer: ON Semiconductor
REK ID: 80716
3.50 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type NPT 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 35A 
Current - Collector Pulsed (Icm) 80A 
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A 
Power - Max 298W 
Switching Energy 320µJ (on), 800µJ (off) 
Input Type Standard 
Gate Charge 100nC 
Td (on/off) @ 25°C 23ns/165ns 
Test Condition 960V, 10A, 10 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 
Supplier Device Package TO-263AB 
Base Part Number HGT1S10N120 

Description

IGBT 1200V 35A 298W TO263AB - IGBT NPT 1200V 35A 298W Surface Mount TO-263AB

IGBT Transistors HGT1S10N120BNS

Datasheet HGT1S10N120BNS (PDF)

Price (check the terms and price with the managers)
Available: 1 psc.
MOQPrice
3.50 € 
HGT1S10N120BNS
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