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HAT2192WP-EL-E

Manufacturer: Renesas Electronics America
REK ID: 135513

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 250V 
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V 
FET Feature 
Power Dissipation (Max) 25W (Tc) 
Rds On (Max) @ Id, Vgs 230 mOhm @ 5A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-WPAK 
Package / Case 8-PowerWDFN 

Description

MOSFET N-CH 250V 10A WPAK - N-Channel 250V 10A (Ta) 25W (Tc) Surface Mount 8-WPAK

Transistors HAT2192WP-EL-E

Datasheet HAT2192WP-EL-E (PDF)

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HAT2192WP-EL-E
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