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HAT2131R-EL-E

Manufacturer: Renesas Electronics America
REK ID: 135448

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 350V 
Current - Continuous Drain (Id) @ 25°C 900mA (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V 
FET Feature 
Power Dissipation (Max) 2.5W (Ta) 
Rds On (Max) @ Id, Vgs 3 Ohm @ 450mA, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SOP 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 8SO - N-Channel 350V 900mA (Ta) 2.5W (Ta) Surface Mount 8-SOP

Transistors HAT2131R-EL-E

Datasheet HAT2131R-EL-E (PDF)

Price (check the terms and price with the managers)
Available: 13 psc.
Price available upon request
HAT2131R-EL-E
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