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H7N1002LSTL-E

Manufacturer: Renesas Electronics America
REK ID: 135447

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 75A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 9700pF @ 10V 
FET Feature 
Power Dissipation (Max) 100W (Tc) 
Rds On (Max) @ Id, Vgs 10 mOhm @ 37.5A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 4-LDPAK 
Package / Case SC-83 

Description

MOSFET N-CH 100V LDPAK - N-Channel 100V 75A (Ta) 100W (Tc) Surface Mount 4-LDPAK

Transistors H7N1002LSTL-E

Datasheet H7N1002LSTL-E (PDF)

Price (check the terms and price with the managers)
Available: 16 psc.
Price available upon request
H7N1002LSTL-E
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