| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Power - Max | 170W |
| Switching Energy | - |
| Input Type | Standard |
| Td (on/off) @ 25°C | 330ns/700ns |
| Test Condition | - |
| Reverse Recovery Time (trr) | 2.5µs |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Supplier Device Package | TO-3P(LH) |
| Base Part Number | GT60 |
IGBT 1000V 60A 170W TO3P LH - IGBT 1000V 60A 170W Through Hole TO-3P(LH)
IGBT Transistors GT60N321(Q)
The manager will inform you of the total cost including delivery.