| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 50A |
| Current - Collector Pulsed (Icm) | 100A |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 50A |
| Power - Max | 240W |
| Switching Energy | 1.3mJ (on), 1.34mJ (off) |
| Input Type | Standard |
| Td (on/off) @ 25°C | 90ns/300ns |
| Test Condition | 300V, 50A, 13 Ohm, 15V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Supplier Device Package | TO-3P(LH) |
IGBT 600V 50A 240W TO3P LH - IGBT 600V 50A 240W Through Hole TO-3P(LH)
IGBT Transistors GT50J121(Q)
The manager will inform you of the total cost including delivery.