| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 10A |
| Current - Collector Pulsed (Icm) | 20A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Power - Max | 60W |
| Switching Energy | - |
| Input Type | Standard |
| Td (on/off) @ 25°C | 400ns/400ns |
| Test Condition | 300V, 10A, 100 Ohm, 15V |
| Reverse Recovery Time (trr) | 200ns |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-220SM |
| Base Part Number | GT10 |
IGBT 600V 10A 60W TO220SM - IGBT 600V 10A 60W Surface Mount TO-220SM
IGBT Transistors GT10J312(Q)
The manager will inform you of the total cost including delivery.