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GT10G131(TE12L,Q)

Manufacturer: Toshiba Semiconductor and Storage
REK ID: 81989

Technical Information

Manufacturer Toshiba Semiconductor and Storage 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 400V 
Current - Collector Pulsed (Icm) 200A 
Vce(on) (Max) @ Vge, Ic 2.3V @ 4V, 200A 
Power - Max 1W 
Switching Energy 
Input Type Standard 
Td (on/off) @ 25°C 3.1µs/2µs 
Test Condition 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Package / Case 8-SOIC (0.173", 4.40mm Width) 
Supplier Device Package 8-SOP (5.5x6.0) 
Base Part Number GT10 

Description

IGBT 400V 1W 8-SOIC - IGBT 400V 1W Surface Mount 8-SOP (5.5x6.0)

IGBT Transistors GT10G131(TE12L,Q)

Datasheet GT10G131(TE12L,Q) (PDF)

Price (check the terms and price with the managers)
Available: 2 psc.
Price available upon request
GT10G131(TE12L,Q)
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