| Manufacturer | Global Power Technologies Group |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3370pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
MOSFET N-CH 800V 12A TO3PN - N-Channel 800V 12A (Tc) 416W (Tc) Through Hole TO-3PN
Transistors GP2M012A080NG
The manager will inform you of the total cost including delivery.