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GP2M012A060H

Manufacturer: Global Power Technologies Group
REK ID: 135243

Technical Information

Manufacturer Global Power Technologies Group 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V 
FET Feature 
Power Dissipation (Max) 231W (Tc) 
Rds On (Max) @ Id, Vgs 650 mOhm @ 6A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220 
Package / Case TO-220-3 

Description

MOSFET N-CH 600V 12A TO220 - N-Channel 600V 12A (Tc) 231W (Tc) Through Hole TO-220

Transistors GP2M012A060H

Datasheet GP2M012A060H (PDF)

Price (check the terms and price with the managers)
Available: 11 psc.
Price available upon request
GP2M012A060H
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