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GP1M009A050FSH

Manufacturer: Global Power Technologies Group
REK ID: 135202

Technical Information

Manufacturer Global Power Technologies Group 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 500V 
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 1195pF @ 25V 
FET Feature 
Power Dissipation (Max) 39W (Tc) 
Rds On (Max) @ Id, Vgs 850 mOhm @ 4.25A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220F 
Package / Case TO-220-3 Full Pack 

Description

MOSFET N-CH 500V 8.5A TO220F - N-Channel 500V 8.5A (Tc) 39W (Tc) Through Hole TO-220F

Transistors GP1M009A050FSH

Datasheet GP1M009A050FSH (PDF)

Price (check the terms and price with the managers)
Available: 4 psc.
Price available upon request
GP1M009A050FSH
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