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GP1M006A065CH

Manufacturer: Global Power Technologies Group
REK ID: 135190

Technical Information

Manufacturer Global Power Technologies Group 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 650V 
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 1177pF @ 25V 
FET Feature 
Power Dissipation (Max) 120W (Tc) 
Rds On (Max) @ Id, Vgs 1.6 Ohm @ 2.75A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package D-Pak 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 650V 5.5A DPAK - N-Channel 650V 5.5A (Tc) 120W (Tc) Surface Mount D-Pak

Transistors GP1M006A065CH

Datasheet GP1M006A065CH (PDF)

Price (check the terms and price with the managers)
Available: 14 psc.
Price available upon request
GP1M006A065CH
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