| Manufacturer | Global Power Technologies Group |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 696pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2 Ohm @ 1.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CH 800V 3A DPAK - N-Channel 800V 3A (Tc) 94W (Tc) Surface Mount TO-252, (D-Pak)
Transistors GP1M003A080CH
The manager will inform you of the total cost including delivery.