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FQB8N60CTM-WS

Manufacturer: ON Semiconductor
REK ID: 135026

Technical Information

Manufacturer ON Semiconductor 
Series QFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V 
FET Feature 
Power Dissipation (Max) 3.13W (Ta), 147W (Tc) 
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3.75A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package D²PAK (TO-263AB) 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET N-CH 600V 7.5A - N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB)

Transistors FQB8N60CTM-WS

Datasheet FQB8N60CTM-WS (PDF)

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FQB8N60CTM-WS
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