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FGY100T65SCDT

Manufacturer: ON Semiconductor
REK ID: 81035
7.59 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Part Status Active 
IGBT Type Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 650V 
Current - Collector (Ic) (Max) 200A 
Current - Collector Pulsed (Icm) 300A 
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 100A 
Power - Max 750W 
Switching Energy 5.4mJ (on), 3.8mJ (off) 
Input Type Standard 
Gate Charge 157nC 
Td (on/off) @ 25°C 84ns/216ns 
Test Condition 400V, 100A, 4.7 Ohm, 15V 
Reverse Recovery Time (trr) 62ns 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 Variant 
Supplier Device Package TO-247-3 

Description

FS3TIGBT TO247 100A 650V - IGBT Trench Field Stop 650V 200A 750W Through Hole TO-247-3

IGBT Transistors FGY100T65SCDT

Datasheet FGY100T65SCDT (PDF)

Price (check the terms and price with the managers)
Available: 5 psc.
MOQPrice
7.59 € 
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