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FGP10N60UNDF

Manufacturer: ON Semiconductor
REK ID: 79666
2.15 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Active 
IGBT Type NPT 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 20A 
Current - Collector Pulsed (Icm) 30A 
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 10A 
Power - Max 139W 
Switching Energy 150µJ (on), 50µJ (off) 
Input Type Standard 
Gate Charge 37nC 
Td (on/off) @ 25°C 8ns/52.2ns 
Test Condition 400V, 10A, 10 Ohm, 15V 
Reverse Recovery Time (trr) 37.7ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-220-3 
Supplier Device Package TO-220-3 

Description

IGBT 600V 20A 139W TO220-3 - IGBT NPT 600V 20A 139W Through Hole TO-220-3

IGBT Transistors FGP10N60UNDF

Datasheet FGP10N60UNDF (PDF)

Price (check the terms and price with the managers)
Available: 295 psc.
MOQPrice
2.15 € 
10 1.93 € 
100 1.55 € 
500 1.28 € 
1,000 1.06 € 
FGP10N60UNDF
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