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FGL60N100BNTD

Manufacturer: ON Semiconductor
REK ID: 79126
6.84 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type NPT and Trench 
Voltage - Collector Emitter Breakdown (Max) 1000V 
Current - Collector (Ic) (Max) 60A 
Current - Collector Pulsed (Icm) 120A 
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A 
Power - Max 180W 
Switching Energy 
Input Type Standard 
Gate Charge 275nC 
Td (on/off) @ 25°C 140ns/630ns 
Test Condition 600V, 60A, 51 Ohm, 15V 
Reverse Recovery Time (trr) 1.2µs 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-264-3, TO-264AA 
Supplier Device Package TO-264 

Description

IGBT 1000V 60A 180W TO264 - IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264

IGBT Transistors FGL60N100BNTD

Datasheet FGL60N100BNTD (PDF)

Price (check the terms and price with the managers)
Available: 344 psc.
MOQPrice
6.84 € 
10 6.14 € 
100 5.03 € 
500 4.28 € 
1,000 3.61 € 
FGL60N100BNTD
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