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FGB30N6S2D

Manufacturer: ON Semiconductor
REK ID: 81611

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Obsolete 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 45A 
Current - Collector Pulsed (Icm) 108A 
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A 
Power - Max 167W 
Switching Energy 55µJ (on), 100µJ (off) 
Input Type Standard 
Gate Charge 23nC 
Td (on/off) @ 25°C 6ns/40ns 
Test Condition 390V, 12A, 10 Ohm, 15V 
Reverse Recovery Time (trr) 46ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 
Supplier Device Package TO-263AB 
Base Part Number FGB30N6 

Description

IGBT 600V 45A 167W TO263AB - IGBT 600V 45A 167W Surface Mount TO-263AB

IGBT Transistors FGB30N6S2D

Datasheet FGB30N6S2D (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
Price available upon request
FGB30N6S2D
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