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FGA50N100BNTD2

Manufacturer: ON Semiconductor
REK ID: 79587
9.08 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Active 
IGBT Type NPT and Trench 
Voltage - Collector Emitter Breakdown (Max) 1000V 
Current - Collector (Ic) (Max) 50A 
Current - Collector Pulsed (Icm) 200A 
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A 
Power - Max 156W 
Switching Energy 
Input Type Standard 
Gate Charge 257nC 
Td (on/off) @ 25°C 34ns/243ns 
Test Condition 600V, 60A, 10 Ohm, 15V 
Reverse Recovery Time (trr) 75ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-3P-3, SC-65-3 
Supplier Device Package TO-3P 

Description

IGBT 1000V 50A 156W TO3P - IGBT NPT and Trench 1000V 50A 156W Through Hole TO-3P

IGBT Transistors FGA50N100BNTD2

Datasheet FGA50N100BNTD2 (PDF)

Price (check the terms and price with the managers)
Available: 243 psc.
MOQPrice
9.08 € 
10 8.20 € 
100 6.79 € 
FGA50N100BNTD2
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