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FDN359BN

Manufacturer: ON Semiconductor
REK ID: 133334

Technical Information

Manufacturer ON Semiconductor 
Series PowerTrench® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 3V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 15V 
FET Feature 
Power Dissipation (Max) 500mW (Ta) 
Rds On (Max) @ Id, Vgs 46 mOhm @ 2.7A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SuperSOT-3 
Package / Case TO-236-3, SC-59, SOT-23-3 

Description

MOSFET N-CH 30V 2.7A 3SSOT - N-Channel 30V 2.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3

Transistors FDN359BN

Datasheet FDN359BN (PDF)

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FDN359BN
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