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FDI8441_F085

Manufacturer: ON Semiconductor
REK ID: 133298

Technical Information

Manufacturer ON Semiconductor 
Series Automotive, AEC-Q101, PowerTrench® 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 80A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V 
FET Feature 
Power Dissipation (Max) 300W (Tc) 
Rds On (Max) @ Id, Vgs 4.7 mOhm @ 80A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package I2PAK (TO-262) 
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA 

Description

MOSFET N-CH 40V 26A TO-262AB - N-Channel 40V 26A (Ta), 80A (Tc) 300W (Tc) Through Hole I2PAK (TO-262)

Transistors FDI8441_F085

Datasheet FDI8441_F085 (PDF)

Price (check the terms and price with the managers)
Available: 14 psc.
Price available upon request
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