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FDFME2P823ZT

Manufacturer: ON Semiconductor
REK ID: 134934

Technical Information

Manufacturer ON Semiconductor 
Series PowerTrench® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 1V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V 
FET Feature Schottky Diode (Isolated) 
Power Dissipation (Max) 1.4W (Ta) 
Rds On (Max) @ Id, Vgs 142 mOhm @ 2.3A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-MicroFET (1.6x1.6) 
Package / Case 6-UFDFN Exposed Pad 

Description

MOSFET P-CH 20V 2.6A 6MICROFET - P-Channel 20V 2.6A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)

Transistors FDFME2P823ZT

Datasheet FDFME2P823ZT (PDF)

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Available: 12 psc.
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FDFME2P823ZT
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