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FCP25N60N

Manufacturer: ON Semiconductor
REK ID: 133615

Technical Information

Manufacturer ON Semiconductor 
Series SupreMOS™ 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 3352pF @ 100V 
FET Feature 
Power Dissipation (Max) 216W (Tc) 
Rds On (Max) @ Id, Vgs 125 mOhm @ 12.5A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220 
Package / Case TO-220-3 

Description

MOSFET N-CH 600V TO-220-3 - N-Channel 600V 25A (Tc) 216W (Tc) Through Hole TO-220

Transistors FCP25N60N

Datasheet FCP25N60N (PDF)

Price (check the terms and price with the managers)
Available: 14 psc.
Price available upon request
FCP25N60N
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