| Manufacturer | EPC |
| Series | eGaN® |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 194pF @ 240V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 3A, 5V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
TRANS GAN 300V 150MO BUMPED DIE - N-Channel 300V 4A (Ta) Surface Mount Die
Transistors EPC2025
The manager will inform you of the total cost including delivery.