| Manufacturer | Diodes Incorporated |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 29pF @ 4V |
| FET Feature | - |
| Power Dissipation (Max) | 425mW (Ta) |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 100mA, 4V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-DFN1006 (1.0x0.6) |
| Package / Case | 3-UFDFN |
MOSFET P-CH 50V 200MA 3-DFN - P-Channel 50V 200mA (Ta) 425mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6)
Transistors DMP57D5UFB-7
The manager will inform you of the total cost including delivery.