| Manufacturer | Diodes Incorporated |
| Series | - |
| Part Status | Preliminary |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.8nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 642pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | - |
| Supplier Device Package | - |
| Package / Case | - |
MOSFET P-CH 30V TSOT-26 - P-Channel 30V 4.3A (Ta) 1.38W
Transistors DMP3056LVT-7
The manager will inform you of the total cost including delivery.