| Manufacturer | Diodes Incorporated |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.1nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 214pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 530mW (Ta) |
| Rds On (Max) @ Id, Vgs | 54 mOhm @ 2.5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DFN2015H4-3 |
| Package / Case | 3-XFDFN |
MOSFET P-CH 20V 2.5A 3-DFN - P-Channel 20V 2.5A (Ta) 530mW (Ta) Surface Mount DFN2015H4-3
Transistors DMP2069UFY4-7
The manager will inform you of the total cost including delivery.