| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 1.5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Package / Case | 6-UFBGA, DSBGA |
MOSFET P-CH 20V 3A 6DSBGA - P-Channel 20V 3A (Tc) 1.5W (Ta) Surface Mount 6-DSBGA (1x1.5)
Transistors CSD25303W1015
The manager will inform you of the total cost including delivery.