| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 9A, 5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
MOSFET N-CH 200V 14.5A TO262-3 - N-Channel 200V 14.5A (Tc) 95W (Tc) Through Hole PG-TO262-3
Transistors BUZ31H3046XKSA1
The manager will inform you of the total cost including delivery.