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BUK9E6R1-100E,127

Manufacturer: NXP USA Inc.
REK ID: 136677

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 
Vgs(th) (Max) @ Id 2.1V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 133nC @ 5V 
Vgs (Max) ±10V 
Input Capacitance (Ciss) (Max) @ Vds 17460pF @ 25V 
FET Feature 
Power Dissipation (Max) 349W (Tc) 
Rds On (Max) @ Id, Vgs 5.9 mOhm @ 25A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package I2PAK 
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA 

Description

MOSFET N-CH 100V 120A I2PAK - N-Channel 100V 120A (Tc) 349W (Tc) Through Hole I2PAK

Transistors BUK9E6R1-100E,127

Datasheet BUK9E6R1-100E,127 (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
Price available upon request
BUK9E6R1-100E,127
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