| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 35.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 12.1nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 693pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 59.4W (Tc) |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
MOSFET N-CH 40V 35.3A LFPAK - N-Channel 40V 35.3A (Tc) 59.4W (Tc) Surface Mount LFPAK56, Power-SO8
Transistors BUK7Y25-40B/C,115
The manager will inform you of the total cost including delivery.