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BUK752R7-30B,127

Manufacturer: NXP USA Inc.
REK ID: 136549

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 6212pF @ 25V 
FET Feature 
Power Dissipation (Max) 300W (Tc) 
Rds On (Max) @ Id, Vgs 2.7 mOhm @ 25A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220AB 
Package / Case TO-220-3 

Description

MOSFET N-CH 30V 75A TO220AB - N-Channel 30V 75A (Tc) 300W (Tc) Through Hole TO-220AB

Transistors BUK752R7-30B,127

Datasheet BUK752R7-30B,127 (PDF)

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BUK752R7-30B,127
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