Manufacturer | NXP USA Inc. |
Series | TrenchMOS™ |
Packaging | Bulk |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Vgs (Max) | 20V |
Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 830mW (Ta) |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 150mA, 5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
MOSFET N-CH 100V 190MA SOT54 - N-Channel 100V 190mA (Ta) 830mW (Ta) Through Hole TO-92-3
Transistors BST72A,112
The manager will inform you of the total cost including delivery.