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BST72A,112

Manufacturer: NXP USA Inc.
REK ID: 136432

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Bulk  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 190mA (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 5V 
Vgs(th) (Max) @ Id 3.5V @ 1mA 
Vgs (Max) 20V 
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V 
FET Feature 
Power Dissipation (Max) 830mW (Ta) 
Rds On (Max) @ Id, Vgs 10 Ohm @ 150mA, 5V 
Operating Temperature 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-92-3 
Package / Case TO-226-3, TO-92-3 (TO-226AA) 

Description

MOSFET N-CH 100V 190MA SOT54 - N-Channel 100V 190mA (Ta) 830mW (Ta) Through Hole TO-92-3

Transistors BST72A,112

Datasheet BST72A,112 (PDF)

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BST72A,112
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