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BSS169L6906HTSA1

Manufacturer: Infineon Technologies
REK ID: 133797

Technical Information

Manufacturer Infineon Technologies 
Series SIPMOS® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 
Vgs(th) (Max) @ Id 1.8V @ 50µA 
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 7V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 68pF @ 25V 
FET Feature Depletion Mode 
Power Dissipation (Max) 360mW (Ta) 
Rds On (Max) @ Id, Vgs 6 Ohm @ 170mA, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-SOT23-3 
Package / Case TO-236-3, SC-59, SOT-23-3 

Description

MOSFET N-CH 100V 170MA SOT-23 - N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount PG-SOT23-3

Transistors BSS169L6906HTSA1

Datasheet BSS169L6906HTSA1 (PDF)

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BSS169L6906HTSA1
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