Manufacturer | Infineon Technologies |
Series | SIPMOS® |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 2.67nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 69pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 360mW (Ta) |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 170mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 100V 170MA SOT-23 - N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount PG-SOT23-3
Transistors BSS123L6433HTMA1
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