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BSP299L6327HUSA1

Manufacturer: Infineon Technologies
REK ID: 133786

Technical Information

Manufacturer Infineon Technologies 
Series SIPMOS® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 500V 
Current - Continuous Drain (Id) @ 25°C 400mA (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 1mA 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V 
FET Feature 
Power Dissipation (Max) 1.8W (Ta) 
Rds On (Max) @ Id, Vgs 4 Ohm @ 400mA, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-SOT223-4 
Package / Case TO-261-4, TO-261AA 

Description

MOSFET N-CH 500V 400MA SOT-223 - N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Transistors BSP299L6327HUSA1

Datasheet BSP299L6327HUSA1 (PDF)

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BSP299L6327HUSA1
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