| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 364pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Rds On (Max) @ Id, Vgs | 700 mOhm @ 1.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
MOSFET N-CH 100V 1.1A SOT-223 - N-Channel 100V 1.1A (Ta) 1.79W (Ta) Surface Mount PG-SOT223-4
Transistors BSP296L6433HTMA1
The manager will inform you of the total cost including delivery.