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BSC889N03MSGATMA1

Manufacturer: Infineon Technologies
REK ID: 133662

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 44A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V 
FET Feature 
Power Dissipation (Max) 2.5W (Ta), 28W (Tc) 
Rds On (Max) @ Id, Vgs 9.1 mOhm @ 30A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TDSON-8 
Package / Case 8-PowerTDFN 

Description

MOSFET N-CH 30V 44A TDSON-8 - N-Channel 30V 12A (Ta) 44A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8

Transistors BSC889N03MSGATMA1

Datasheet BSC889N03MSGATMA1 (PDF)

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BSC889N03MSGATMA1
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