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BSB012N03LX3 G

Manufacturer: Infineon Technologies
REK ID: 133767

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 39A (Ta), 180A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.2V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 169nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 16900pF @ 15V 
FET Feature 
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 
Rds On (Max) @ Id, Vgs 1.2 mOhm @ 30A, 10V 
Operating Temperature -40°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package MG-WDSON-2, CanPAK M™ 
Package / Case 3-WDSON 

Description

MOSFET N-CH 30V 180A 2WDSON - N-Channel 30V 39A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™

Transistors BSB012N03LX3 G

Datasheet BSB012N03LX3 G (PDF)

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BSB012N03LX3 G
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