| Manufacturer | NXP USA Inc. |
| Series | - |
| Packaging | Tape & Box (TB) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V |
| Vgs(th) (Max) @ Id | 1.8V @ 1mA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 100mA, 2.8V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
MOSFET N-CH 200V 300MA SOT54 - N-Channel 200V 300mA (Ta) 1W (Ta) Through Hole TO-92-3
Transistors BS108,126
The manager will inform you of the total cost including delivery.