| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET N-CH 55V 42A IPAK - N-Channel 55V 42A (Tc) 110W (Tc) Through Hole I-Pak
Transistors AUIRLU2905
The manager will inform you of the total cost including delivery.