| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 4.5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 11210pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 165A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
MOSFET N-CH 60V 270A TO262 - N-Channel 60V 195A (Tc) 380W (Tc) Through Hole TO-262
Transistors AUIRLSL3036
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