| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7670pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
MOSFET N-CH 100V 75A TO262 - N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-262
Transistors AUIRFSL4310
The manager will inform you of the total cost including delivery.