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AUIRFS3307Z

Manufacturer: Infineon Technologies
REK ID: 133908

Technical Information

Manufacturer Infineon Technologies 
Series HEXFET® 
Packaging Tube  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 75V 
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 150µA 
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 50V 
FET Feature 
Power Dissipation (Max) 230W (Tc) 
Rds On (Max) @ Id, Vgs 5.8 mOhm @ 75A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package D2PAK 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET N-CH 75V 120A D2PAK - N-Channel 75V 120A (Tc) 230W (Tc) Surface Mount D2PAK

Transistors AUIRFS3307Z

Datasheet AUIRFS3307Z (PDF)

Price (check the terms and price with the managers)
Available: 16 psc.
Price available upon request
AUIRFS3307Z
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