Manufacturer | Infineon Technologies |
Series | HEXFET® |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 24V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 390nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 11220pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 380W (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 180A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD |
Package / Case | TO-247-3 |
MOSFET N-CH 24V 180A TO-247AD - N-Channel 24V 180A (Tc) 380W (Tc) Through Hole TO-247AD
Transistors AUIRFP2602
The manager will inform you of the total cost including delivery.